Compact CMOS current conveyor for integrated NEMS resonators
نویسندگان
چکیده
منابع مشابه
Compact CMOS current conveyor for integrated NEMS resonators
This paper presents a fully-integrated NEMS resonator together with a compact built-in CMOS interfacing circuitry. The proposed low-power CCII circuit allows measuring the mechanical frequency response of the nanocantilever structure in the MHz range. Detailed experimental results at different DC biasing conditions and pressure levels are presented for a real mixed electro-mechanical system int...
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In this work we study the feasibility to obtain the smallest CMOS-NEMS resonator using a sub-100 nm CMOS technology. The NEMS resonators are defined in a top-down approach using the available layers of the 65 nm CMOS technology from ST Microelectronics. A combination of dry and wet etching is developed in order to release the NEMS in an in-house post-CMOS process. Two different NEMS resonators ...
متن کاملProcedural design of a CMOS current conveyor
1 Facultatea de Electronică şi Telecomunicaţii, Departamentul Electronică Aplicată Bd. V. Pârvan Nr. 2, 300223 Timişoara, e-mail [email protected] Abstract – This paper presents a new procedural design sequence for the design of a CMOS current conveyor. It is based on the structured design approach and consists in circuit partitioning, derivation of the specifications for each basic an...
متن کاملA programmable CMOS bandgap voltage reference circuit using current conveyor
This paper presents a new structure of a bandgap circuit which can be programmed to get any desired output voltage. Unlike conventional bandgap circuits, the proposed bandgap circuit uses MOS transistors operating in subthreshold region instead of bipolar transistors to generate PTAT and IPTAT currents. Use of the current conveyor makes the circuit capable of being operated at lower supply volt...
متن کاملDesign of analog field programmable cmos current conveyor
The paper propose a modified high frequency current controlled current conveyor CMOS circuit CCCII where current gain, current controlling intrinsic impedance and circuit offsets are programmable independently to desired values within a specific field range after fabrication with the help of field programmable floating gate transistors FGMOS. The programmable charge at floating-gate of FGMOS us...
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ژورنال
عنوان ژورنال: IET Circuits, Devices & Systems
سال: 2008
ISSN: 1751-858X
DOI: 10.1049/iet-cds:20070320